Abstract—Single Electron Transistor is a promising for future nano electronic devices with low-power consumption, fast speed, and ultrahigh density integration [2]. The work is to compare the characteristics of silicon based Single Electron Transistor , Single-walled-carbon-nanotube - based single-electron devices . Single walled carbon-nanotube - based single electron devices are fabricated with long SWNT channel surrounded by several short SWNTs on the electrodes [16]. Silicon based Single Electron Transistor has the quantum dot which is made up of Silicon. Based on the material of the dot characteristics of the SET will vary. The Coulomb blockade effect is the key mechanisms for such devices to work properly. Since the first demonstration of SWNT single electron transistors at room temperature is carried out [1]. The Silicon Based Single Electron Transistor is demonstrated by L. Zhuang et al.[3]. Previously, the silicon single electron transistor operating at 170 K was reported[4]. These results are discussed in terms of different tunnelling rates and V-I characteristics.