Online ISSN: 2515-8260

Author : Aravindan, G.


DESIGN AND IMPLEMENTATION OF GALLIUM NITRIDE BASED SEMICONDUCTOR IN BOOST CONVERTER

V. Sandeep; S.M. Karthick Ramnathan; G. Aravindan; Mr T.Santhana Krishnan

European Journal of Molecular & Clinical Medicine, 2020, Volume 7, Issue 4, Pages 2592-2608

Power electronics is the process of applying solid-state devices like transistors, Mosfet, diodes etc for controlling and converting electric power. They are used in the fields such as telecommunication, utility systems, facts, residential. Most of the power electronic devices are made up of Silicon semiconductor. Silicon has high breakdown electric field strength and so it can configure to withstand hey more than hey 600 to 1000 volts [4]. Even though there are many benefits in silicon, the increased heat generation decreases the efficiency of the device. It is caused due to switching loss. A new semiconductor called gallium nitride is being used to eradicate the disadvantages of silicon. Gallium nitride has high electron mobility and high saturation electron velocity compared to silicon and so it enables them to function over 250 GHz [1]. Since the semiconductor has wide bandgap, they are not sensitive to heat. Through this project, we can obtain efficiency between Two semiconductors by comparing its switching characteristics in boost converter.