European Journal of Molecular & Clinical Medicine

This research article utilizes the finite element method of analysis to achieve
the finest throughput of piezoresistive nano cantilever sensor by minimizing the
dimensions of both physical piezoresistor and cantilever. The
750nmx300nmx15nm-sized cantilever is incorporated with 5nm substantial Si as
piezoresistor is used for revision. The proposed cantilever output performance has
been calculated based onsurface stress sensitivity and displacement. A
maximumresultant displacement value of about 12nm for the load of 100pN has
been obtained . The Performance comparison between Polysilicon and SiO2
cantilever has been found out by applied identical load and measured displacement.
Similarly the sensitivity of the cantilever sensor by parametric sweep on thickness is
applied for both cantilever and piezoresistor. The parametric sweep results shows
that the sensitivity of the cantilever is highest when the thickness of both cantilever
and piezoresistoris at the smallest. Poly silicon and SiO2 based cantilevers with the
built-in longitudinal cut at the bottom create stress concentration regions which will
greatly improved sensitivity as high as 13.89% and 31.81% in comparison with
other Non-SCR cantilevers for the proposed design.

MEMS plays a vital role in manufacturing several electronic devices.It has a wide application in electronics manufacturing field.The fabrication of MEMS is very popular because of its miniature size,capacity power,sensitivity,etc. MEMS fabrication is possible even at high resonant frequency devices which can be operated at regular frequencies and greater bandwidths.Simulation is done using COMSOL multiphysics software.A surface capacitive pressure sensor has been simulated using different materials.The capacitance is analysed and the graphs are plotted.