Online ISSN: 2515-8260
Keywords : energy band model
Temperature change in the density of states and band gap of a semiconductor
European Journal of Molecular & Clinical Medicine,
2021, Volume 8, Issue 1, Pages 679-684
In this work, the temperature dependence of the density of states is investigated using a mathematical model. The temperature broadening of the allowed bands in semiconductors is estimated. A convenient formula for calculating the temperature dependence of the bandgap of silicon is obtained using the approximation. Comparison of the experimental curve of the temperature dependence of the band gap and the curve according to the obtained formula for silicon showed agreement.