In this paper, a four die stacked 3D ICs with integrated multi walled carbon nanotube (MWCNT) based through silicon via (TSV) is constructed. The steady state thermal-electric analysis is performed. The current density and the equivalent stress analysis is performed along the TSV path. ANSYS workbench is used for the simulation. The average stress values and current density values are evaluated at various applied currents and are compared. The total deformation for the both MWCNT based TSV and Copper based TSV are compared. It shows that CNT based TSVs outperforms copper based TSVs.